t4 - lds - 010 3-3, rev . 1 (13 0373 ) ?201 3 microsemi corporation page 1 of 4 msicsx05120 available silicon carbide s chottky p ower rectifier 5a, 1200v description this 1200 v rated sic schottky rectifier is in a hermetically sealed package and offers very fast swi tching capabilities with greater efficiency at higher operating temperatures compared to existing ultrafast silicon rectifiers. tabless to - 257 package also available in : to - 257 package (leaded) msics n 05120 u4 package (surface mount) msicss05120 dual u3 package (surface mount) msicss05120cc dua l to - 257 package ( leaded ) msicsn05120cc, ca, d important: for the latest information, visit our website http://www.microse mi.com . features ? tabless to - 257 package. ? lightweight. ? hermetically sealed package. ? internal metallurgical bonds. ? high temperature (t j ) +175 o c. ? zero reverse recovery current. ? temperature independent switching behavior. ? very fast switching compared to fast or ultrafast rectifiers. ? positive v f temperature coefficient (parallel devices for higher currents). ? rohs compliant version is available. applications / benefits ? schottky barrier diode for military, space and other high reliability applications . ? switching power supplies or other applications requiring extremely fast switchi ng and essentially no switching losses. ? high forward surge capability. ? high reverse voltage capability with very fast switching. ? inherently radiation hard >100 krads as described in microsemi micronote 050 . maximum ratings msc C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to + 175 o c thermal resistance, junction - to - case r jc 2.5 c /w working peak reverse voltage v rwm 1200 v non - repetitive peak inverse voltage v rsm 1200 v dc blocking voltage v dc 1200 v average dc output current i o 5 a non - repetitive sinusoidal surge current i fsm 30 a downloaded from: http:///
t4 - lds - 010 3-3, rev . 1 (13 0373 ) ?201 3 microsemi corporation page 2 of 4 msicsx05120 mec hanical and packaging ? case: nickel p lated c opper b ase & 1020 s teel f rame . ? terminals: solder d ipped c opper c ored 52 a lloy or rohs compliant matte - tin plating . ? marking: alpha n umeric . ? polarity: see s chematic on last page. ? weight: approximately 3.0 grams. ? see p ackage d imensions on last page. part nomenclature m sic s x 05 120 (e3) microsemi silicon carbide schottky t abless to - 257 package rohs compliance e3 = rohs compliant blank = non - rohs compliant voltage ( x10 ) avg forward current (a) symbols & definitions symbol definition c j junction capacitance: the junction capacitance in pf at a specified frequency (typic ally 1 mhz ) and specified voltage. i f forward current: the forward current dc value, no alternating component. i r reverse current: the maximum reverse (leakage) current that will flow at the specified vol tage and temperature. t j junction temperature: the tempe rature of a semiconductor junction. v f forward voltage: the forward voltage the device will exhibit at a specified current (typic ally shown as maximum value). v r reverse voltage: the reverse voltage dc value, no alternating component. downloaded from: http:///
t4 - lds - 010 3-3, rev . 1 (13 0373 ) ?201 3 microsemi corporation page 3 of 4 msicsx05120 electrical c haracteristics @ 25 o c unless otherwise noted parameters / test conditions symbol min. max. typ . unit forward voltage i f = 1 a, t j = 25 c* i f = 2.5 a, t j = 25 c* i f = 5.0 a, t j = 25 c* v f 1.2 1.6 1.8 v reverse current v r = 1200 v, t j = 25 c v r = 1200 v, t j = 175 c i r 50 100 a junction capacitance v r = 0 v f = 1 mhz c j 500 pf * pulse test: pulse width 300 sec, d uty cycle 2% . downloaded from: http:///
t4 - lds - 010 3-3, rev . 1 (13 0373 ) ?201 3 microsemi corporation page 4 of 4 msicsx05120 package dimensions note: 1. dimensions are in inches. 2. inch equivalents are given for general information only. 3. g lass meniscus included in dimension tl and bl. 4. tabless to - 257 package . schematic dimensions ltr inch millimeters min max min max bl 0 .410 0 .430 10.41 10.92 ch 0 .190 0 .200 4.83 5.08 ld 0 .025 0 .035 0.64 0.89 ll 0 .505 0 .595 12.82 15.11 lo 0 .120 bsc 3.05 bsc ls 0 .100 bsc 2.54 bsc tw 0 .410 0 .420 10.41 10.67 term 1 see schematic term 2 open (no connection) term 3 see schematic downloaded from: http:///
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